What We Learned and Used in the first Inductively Coupled Plasma, ICP, for Plasma Processing and in later development
 

John H Keller,

K2 Keller Consulting, LLC,
E-mail: keller.plasma@verizon.net

The first ICP for Plasma Processing, also called Radio Frequency Induction, RFI, were developed at IBM, East Fishkill, NY, USA. These were extremely efficient at producing high density plasma. This paper will discuss: 1) How to drive the antenna to get high plasma density with low plasma voltage and low capacitively coupled plasma, CCP, losses, 2) Low matching losses, 3) Optimum way (presets) to start an ICP, 4) Frequency effects and 5) Achieving high plasma stability.


1. Introduction

    This paper gives some of the information that was learned from the first ICP systems for plasma processing (both etching and deposition) plus knowledge which was gained both at IBM up to 1999 and later from consulting for a number of plasma tool vendors. These consisted of:
3 Plasma tool companies that included inventions,
2 Implantation companies that included an invention and
1 University for bright plasma beams, which included a number of inventions

For the whole paper, click here for the pdf. file

Also see the following US Patents:
US 6,413,359  Plasma reactor with high selectivity and reduced damage
US 5,783,102  Negative ion deductive source for etching high aspect ratio structures



 
 
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